Difference Between Depletion MOSFET and Enhancement MOSFET
Difference between D-MOSFET (Depletion MOSFET) and E-MOSFET (Enhancement MOSFET) is given below:
Parameter | Depletion MOSFET | Enhancement MOSFET |
---|---|---|
Presence of channel | Channel is present., either of n-type or p-type. | Channel is not present. It is induced during the time of operation. |
Insulating layer | Insulating layer of silicon dioxide is presence between gate and channel. | Insulating layer of silicon dioxide is present between gate and substrate. |
Working | It can work both in depletion and enhancement mode. | It works only in enhancement mode. |
Type of transistor | It is normally called as ON transistor. | It is normally called as OFF transistor. |
Effect of gate voltage | Flow of current takes place between source and drain terminal when no voltage is applied at gate terminal. | Flow of current does not take place between source and drain terminal when no voltage is applied at gate terminal. |
E-MOSFET
Enhancement MOSFET which is commonly called as E-MOSFET is a type of field effect transistor which is used mainly in voltage-controlled devices. It is a unipolar device, i.e. device in which conduction of current takes place either by electrons or holes. It is a three-terminal device which is mainly used as amplifier or in switching devices.
This type of transistor can be used both in analog and digital devices. These transistors are more popular than Bipolar junction transistors due to less power dissipation and negligible leakage current. These are smaller in size and hence find its application in integrated circuits (ICs).
Table of Content
- Enhancement Type MOSFET
- Symbol
- Types of E-MOSFET
- N-Channel E-MOSFET
- P-Channel E-MOSFET
- Working
- Characteristics
- Difference Between Depletion MOSFET and Enhancement MOSFET
- Features of
- Advantages
- Disadvantages
- Applications
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